Ray Holzworth Jr

Ray Holzworth, Jr has extensive work experience in the field of microscopy, failure analysis, and reliability research. Ray began their career in 2007 at the University of Florida, where they worked as a Consultant. In this role, they completed structural and doping analysis of Si FinFETs using TEM and APT/LEAP techniques. Ray also fabricated Si FinFET samples for TEM and APT/LEAP analysis and prepared samples for FIB milling using wet chemical etching, chemical vapor deposition, and metal deposition. Additionally, they investigated reliability issues, failure mechanisms, and defect formation mechanisms in AlGaN/GaN HEMTs through electrical, mechanical, and thermal stress accelerated testing. Ray initiated reliability studies on the HEMTs and collaborated with device modeling programmers to implement accurate simulations for device life-time predictions. In 2014, they joined QuantumScape as the Director of Microscopy & Failure Analysis.

Ray Holzworth, Jr's education history begins in 2003 when they enrolled at the University of Florida. Ray completed their Bachelor's degree in Materials Science & Engineering in 2007. Ray then pursued further studies and achieved a Master's degree in Materials Science & Engineering from the same university in 2009. Finally, from 2007 to 2013, they completed their Doctor of Philosophy (Ph.D.) in Materials Science & Engineering also at the University of Florida.